High selectivity Inductively Coupled Plasma etching of GaAs...

High selectivity Inductively Coupled Plasma etching of GaAs over InGaP

D.C Hays, H Cho, J.W Lee, M.W Devre, B.H Reelfs, D Johnson, J.N Sasserath, L.C Meyer, E Toussaint, F Ren, C.R Abernathy, S.J Pearton
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Volume:
156
Year:
2000
Language:
english
Pages:
9
DOI:
10.1016/s0169-4332(99)00363-3
File:
PDF, 567 KB
english, 2000
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