IR-RTI oscillations during laser induced epitaxial GaN film...

Applied Surface Science 2000 Vol. 154-155; Iss. none

IR-RTI oscillations during laser induced epitaxial GaN film growth and the role of free carrier concentration

B Hüttner, M Gross, T Rupp, H Schröder
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Volume:
154-155
Year:
2000
Language:
english
Pages:
6
DOI:
10.1016/s0169-4332(99)00445-6
File:
PDF, 540 KB
english, 2000
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