Pt–Germanide Formed by Laser Annealing and Its Application for Schottky Source/Drain Metal–Oxide–Semiconductor Field-Effect Transistor Integrated with TaN/Chemical Vapor Deposition HfO2/Ge Gate Stack
R. Li, S. Lee, M. Hong, D. Chi, D. KwongYear:
2008
Language:
english
DOI:
10.1143/JJAP.47.2548
File:
PDF, 318 KB
english, 2008