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A Self-Aligned Gate AlGaAs/GaAs Heterostructure Field-Effect Transistor with an Ion-Implanted Buried-Channel for use in High Efficiency Power Amplifiers
K. Nishihori, Y. Kitaura, Y. Tanabe, M. Mihara, M. Yoshimura, T. Nitta, Y. Kakiuchi, N. UchitomiYear:
1998
DOI:
10.1143/JJAP.37.3200
File:
PDF, 959 KB
1998