Powerful AlGaAs/InGaAs/GaAs-based diode lasers with a wavelength of 1.06 μm and a reduced divergence in the plane perpendicular to the p — n junction
Bezotosnyi, V V, Davydova, Evgeniya I, Zalevskii, I D, Konyaev, V P, Marmalyuk, Aleksandr A, Padalitsa, A A, Shishkin, Viktor AVolume:
29
Language:
english
Journal:
Quantum Electronics
DOI:
10.1070/QE1999v029n04ABEH001470
Date:
April, 1999
File:
PDF, 157 KB
english, 1999