Conductivity in heavily doped and compensated epitaxial...

Semiconductor Science and Technology 1986 / 08 Vol. 1; Iss. 2

Conductivity in heavily doped and compensated epitaxial gallium arsenide layers

Evtimova, S K, Dobrego, V P
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Volume:
1
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/1/2/011
Date:
August, 1986
File:
PDF, 544 KB
english, 1986
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