Role of implantation temperature on residual damage in ion-implanted 6H-SiC
Héliou, R, Brebner, J L, Roorda, SVolume:
16
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/16/10/305
Date:
October, 2001
File:
PDF, 263 KB
english, 2001