Dynamic threshold mode operation of p-channel Si and...

Dynamic threshold mode operation of p-channel Si and strained-SiGe MOSFETs between 10 K and 300 K

Gaspari, V, Fobelets, K, Velazquez-Perez, J E, Prest, M J, Whall, T E
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
19
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/19/9/L01
Date:
September, 2004
File:
PDF, 91 KB
english, 2004
Conversion to is in progress
Conversion to is failed