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Dynamic threshold mode operation of p-channel Si and strained-SiGe MOSFETs between 10 K and 300 K
Gaspari, V, Fobelets, K, Velazquez-Perez, J E, Prest, M J, Whall, T EVolume:
19
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/19/9/L01
Date:
September, 2004
File:
PDF, 91 KB
english, 2004