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Near band-gap photoluminescence of the MOCVD-grown heavily Si-doped GaAs
Lideikis, T, Treideris, GVolume:
4
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/4/11/006
Date:
November, 1989
File:
PDF, 448 KB
english, 1989