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Effect of impurity impact ionization on the dynamic characteristics of 4H-SiCp+–n––n+diodes at low temperatures (77 K)
Ivanov, P. A., Potapov, A. S., Samsonova, T. P.Volume:
49
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782615070118
Date:
July, 2015
File:
PDF, 326 KB
english, 2015