![](/img/cover-not-exists.png)
Effects of Tailing of Density of State on the Mobility of Si-MOSFETs at Low Temperatures–A Proposal for the Method of Characterization of Si-SiO 2 Interfaces–
Yagi, Atsuo, Kawaji, ShinjiVolume:
20
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.20.909
Date:
May, 1981
File:
PDF, 961 KB
1981