Reduced Damage Generation in GaAs Implanted with Focused Be...

Japanese Journal of Applied Physics 1984 / 7 Vol. 23; Iss. Part 2, No

Reduced Damage Generation in GaAs Implanted with Focused Be Ions

Bamba, Yasuo, Miyauchi, Eizo, Arimoto, Hiroshi, Takamori, Akira, Hashimoto, Hisao
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Volume:
23
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.23.L515
Date:
July, 1984
File:
PDF, 481 KB
1984
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