Barrier Heights of Junctions between Amorphous Si-Ge-B and...

Japanese Journal of Applied Physics 1985 / 2 Vol. 24; Iss. Part 1, No

Barrier Heights of Junctions between Amorphous Si-Ge-B and Crystalline GaAs

Murase, Katsumi, Amemiya, Yoshihito
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Volume:
24
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.24.192
Date:
February, 1985
File:
PDF, 1.16 MB
1985
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