Surface Topography of Ion-Etched Si Wafers Studied by...

Japanese Journal of Applied Physics 1990 / 4 Vol. 29; Iss. Part 1, No

Surface Topography of Ion-Etched Si Wafers Studied by Electron Microscopy

Yokota, Yasuhiro, Hashimoto, Hatsujiro, Song, Minghui, Awaji, Mitsuhiro
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.739
Date:
April, 1990
File:
PDF, 4.40 MB
1990
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