Interdiffusion of Si and Ge Atoms during Gas-Source MBE of...

Japanese Journal of Applied Physics 1990 / 9 Vol. 29; Iss. Part 2, No

Interdiffusion of Si and Ge Atoms during Gas-Source MBE of Ge on Si(100) at 500-800°C

Suemitsu, Maki, Chiba, Kazuhiro, Miyamoto, Nobuo
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.L1591
Date:
September, 1990
File:
PDF, 510 KB
1990
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