Thermal Stability of the AlN/a-Si/GaAs MIS Diodes with...

Japanese Journal of Applied Physics 1990 / 11 Vol. 29; Iss. Part 2, No

Thermal Stability of the AlN/a-Si/GaAs MIS Diodes with Different GaAs Surface Stoichiometry

Fujieda, Shinji
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.L2099
Date:
November, 1990
File:
PDF, 409 KB
1990
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