Improvement of Oxide Leakage Currents in MOS Structures by...

Japanese Journal of Applied Physics 1990 / 11 Vol. 29; Iss. Part 2, No

Improvement of Oxide Leakage Currents in MOS Structures by Postirradiation Annealing

Lin, Jing-Jenn, Hwu, Jenn-Gwo
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.L2111
Date:
November, 1990
File:
PDF, 526 KB
1990
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