Under Field Oxide Dopant Enhancement (UFDE) for CMOS and...

Japanese Journal of Applied Physics 1990 / 12 Vol. 29; Iss. Part 2, No

Under Field Oxide Dopant Enhancement (UFDE) for CMOS and BiCMOS Technology

Lee, Jong Ho, Park, Young June, Lee, Jong Duk
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.L2292
Date:
December, 1990
File:
PDF, 1.01 MB
1990
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