GaAs Schottky Diodes with Ideality Factor of Unity...

Japanese Journal of Applied Physics 1993 / 6 Vol. 32; Iss. Part 1, No

GaAs Schottky Diodes with Ideality Factor of Unity Fabricated by In Situ Photoelectrochemical Process

Okumura, Tsugunori, Yamamoto, Shin-ichi, Shimura, Michiko
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Volume:
32
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.32.2626
Date:
June, 1993
File:
PDF, 1.13 MB
1993
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