Deep Level Characterization of Submillimeter-Wave GaAs...

Japanese Journal of Applied Physics 1993 / 1 Vol. 32; Iss. Part 1, No

Deep Level Characterization of Submillimeter-Wave GaAs Schottky Diodes Produced by a Novel In-Situ Electrochemical Process

Hashizume, Tamotsu, Hasegawa, Hideki, Sawada, Takayuki, Grüb, Andreas, Hartnagel, Hans L.
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Volume:
32
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.32.486
Date:
January, 1993
File:
PDF, 763 KB
1993
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