Control of GaAs Schottky Barrier Height by Ultrathin...

Japanese Journal of Applied Physics 1993 / 1 Vol. 32; Iss. Part 1, No

Control of GaAs Schottky Barrier Height by Ultrathin Molecular beam epitaxy si interface control layer

koyanagi, ken-ichi, Kasai, Seiya, Hasegawa, Hideki
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Volume:
32
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.32.502
Date:
January, 1993
File:
PDF, 1.23 MB
1993
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