Etch Rate Acceleration of SiO 2...

Japanese Journal of Applied Physics 1993 / 12 Vol. 32; Iss. Part 1, No

Etch Rate Acceleration of SiO 2 during Wet Treatment after Gate Etching

Tatsumi, Tetsuya, Fukuda, Seiichi, Kadomura, Shingo
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Volume:
32
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.32.6114
Date:
December, 1993
File:
PDF, 959 KB
1993
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