Low-Temperature Si Epitaxy by Photochemical Vapor...

Japanese Journal of Applied Physics 1994 / 2 Vol. 33; Iss. Part 2, No

Low-Temperature Si Epitaxy by Photochemical Vapor Deposition with $\bf SiH_{2}Cl_{2}$

Oshima, Takayuki, Alonso, Juan Carlos, Yamada, Akira, Konagai, Makoto, Takahashi, Kiyoshi
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Volume:
33
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.33.L153
Date:
February, 1994
File:
PDF, 657 KB
1994
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