Silicon-Based Single-Electron-Tunneling Transistor Operated...

Japanese Journal of Applied Physics 1995 / 8 Vol. 34; Iss. Part 1, No

Silicon-Based Single-Electron-Tunneling Transistor Operated at 4.2 K

Ohata, Akiko, Niiyama, Hiromi, Shibata, Toru, Nakajima, Kazuaki, Toriumi, Akira
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Volume:
34
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.34.4485
Date:
August, 1995
File:
PDF, 730 KB
1995
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