S i O 2...

Japanese Journal of Applied Physics 1996 / 4 Vol. 35; Iss. Part 1, No

S i O 2 Etching in C 4F 8 / O 2 Electron Cyclotron Resonance Plasma

Siozawa, Ken-itiro, Tabaru, Kenji, Maruyama, Takahiro, Fujiwara, Nobuo, Yoneda, Masahiro
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Volume:
35
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.35.2483
Date:
April, 1996
File:
PDF, 957 KB
1996
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