High-Quality CVD/Thermal Stacked Gate Oxide Films with Hydrogen-Free CVD S i O 2 Formed in a S i C l 4 – N 2O System
Ogata, Tamotsu, Kobayashi, Kiyoteru, Watanabe, Hajime, Kurokawa, Hiroshi, Matsui, Yasuji, Hirayama, MakotoVolume:
36
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.36.1360
Date:
March, 1997
File:
PDF, 755 KB
1997