Novel Low-Temperature Double Passivation Layer in...

Japanese Journal of Applied Physics 1997 / 4 Vol. 36; Iss. Part 1, No

Novel Low-Temperature Double Passivation Layer in Hydrogenated Amorphous Silicon Thin Film Transistors

Liao, Wen-Shiang, Lee, Si-Chen
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Volume:
36
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.36.2073
Date:
April, 1997
File:
PDF, 779 KB
1997
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