Excellence of Gate Oxide Integrity in...

Japanese Journal of Applied Physics 1997 / 5 Vol. 36; Iss. Part 1, No

Excellence of Gate Oxide Integrity in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits Based on P - / P - Thin-Film Epitaxial Silicon Wafers

Shimizu, Hirofumi, Sugino, Yuji, Suzuki, Norio, Kiyota, Shogo, Nagasawa, Koichi, Fujita, Masato, Takeda, Kazuo, Isomae, Seiichi
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Volume:
36
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.36.2565
Date:
May, 1997
File:
PDF, 1.03 MB
1997
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