Photoluminescent Intensity from Porous Silicon Depends on...

Japanese Journal of Applied Physics 1997 / 3 Vol. 36; Iss. Part 2, No

Photoluminescent Intensity from Porous Silicon Depends on Current Density during Anodization

Ohmukai, Masato, Tsutsumi, Yasuo
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Volume:
36
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.36.L292
Date:
March, 1997
File:
PDF, 320 KB
1997
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