Numerical Analysis of the Electrical Characteristics of...

Japanese Journal of Applied Physics 1999 / 6 Vol. 38; Iss. Part 1, No

Numerical Analysis of the Electrical Characteristics of Gate Overlapped Lightly Doped Drain Polysilicon Thin Film Transistors

Pecora, Alessandro, Massussi, Fabio, Mariucci, Luigi, Fortunato, Guglielmo, Ayres, J. Richard, Brotherton, Stanley D.
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Volume:
38
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.38.3475
Date:
June, 1999
File:
PDF, 696 KB
english, 1999
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