Device Characteristics of Polysilicon Thin-Film Transistors...

Device Characteristics of Polysilicon Thin-Film Transistors Fabricated by Electroless Plating Ni-Induced Crystallization of Amorphous Si

Chao, Chi-Wei, Wu, Yew Chung Sermon, Hu, Gau-Ren, Feng, Ming-Shian
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Volume:
42
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.42.1556
Date:
April, 2003
File:
PDF, 170 KB
english, 2003
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