Base Current Control in Low- V...

Japanese Journal of Applied Physics 2004 / 4 Vol. 43; Iss. 4B

Base Current Control in Low- V BE -Operated SiGeC Heterojunction Bipolar Transistors Using SiGe-Cap Structure and High-Carbon-Content Base

Saitoh, Tohru, Kawashima, Takahiro, Kanzawa, Yoshihiko, Sato-Iwanaga, Junko, Idota, Ken, Takagi, Takeshi, Ohnishi, Teruhito, Yuki, Koichiro, Sano, Tsuneichiro, Sawada, Shigeki
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Volume:
43
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.43.2250
Date:
April, 2004
File:
PDF, 139 KB
english, 2004
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