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The Magnitude of Potential Exposure-Tool-Induced Critical Dimension and Overlay Errors in Double Dipole Lithography for the 65-nm and 45-nm Technology Nodes
Chiou, Tsann-Bim, Chen, Alek C., Tseng, Shih-En, Eurlings, Mark, Hendrickx, Eric, Hsu, StephenVolume:
43
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.43.3672
Date:
June, 2004
File:
PDF, 550 KB
english, 2004