Behavior of Nano-N-Channel Metal–Oxide–Semiconductor...

Japanese Journal of Applied Physics 2004 / 2 Vol. 43; Iss. 2

Behavior of Nano-N-Channel Metal–Oxide–Semiconductor Off-State Leakage Currents

Huang, Heng-Sheng, Tuan, Fu-Yuan, Hsu, Wen-Liang, Yao, Y. D., Chen, J. K., Fang, Mason
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Volume:
43
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.43.467
Date:
February, 2004
File:
PDF, 352 KB
english, 2004
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