Epitaxial Growth of Si-Based Ternary Alloy Semiconductor...

Japanese Journal of Applied Physics 2004 / 5 Vol. 43; Iss. No. 6B

Epitaxial Growth of Si-Based Ternary Alloy Semiconductor Ba 1- x Sr x Si 2 Films on Si(111) Substrates by Molecular Beam Epitaxy

Inomata, Yuya, Suemasu, Takashi, Izawa, Takamasa, Hasegawa, Fumio
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Volume:
43
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.43.L771
Date:
May, 2004
File:
PDF, 108 KB
english, 2004
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