Influence of Charge Traps within HfSiON Bulk on Positive...

Japanese Journal of Applied Physics 2005 / 4 Vol. 44; Iss. 4B

Influence of Charge Traps within HfSiON Bulk on Positive and Negative Bias Temperature Instability of HfSiON Gate Stacks

Fujieda, Shinji, Kotsuji, Setsu, Morioka, Ayuka, Terai, Masayuki, Saitoh, Motofumi
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Volume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.2385
Date:
April, 2005
File:
PDF, 293 KB
english, 2005
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