Design of Unique NAND Flash Memory Cells with Low Program Disturbance Utilizing Novel Booster Line
Mun, Kyung Sik, Kim, Jae-Ho, Kim, Tae Whan, Kwack, Kae DalVolume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.45.4955
Date:
June, 2006
File:
PDF, 167 KB
english, 2006