Characterizing the Channel Backscattering Behavior in...

Japanese Journal of Applied Physics 2006 / 11 Vol. 45; Iss. 11

Characterizing the Channel Backscattering Behavior in Nanoscale Strained Complementary Metal Oxide Semiconductor Field-Effect Transistors

Lin, Hong-Nien, Chen, Hung-Wei, Ko, Chih-Hsin, Ge, Chung-Hu, Lin, Horng-Chih, Huang, Tiao-Yuan, Lee, Wen-Chin
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Volume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.45.8611
Date:
November, 2006
File:
PDF, 280 KB
english, 2006
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