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Effects of Laser Annealing on the Electrical Characteristics of Dynamic Random Access Memory Using (Ba 0.7 Sr 0.3 )(Ti 0.9 Zr 0.1 )O 3 Thin Films
Chen, Kai-Huang, Chen, Ying-Chung, Yang, Cheng-Fu, Chen, Zhi-Sheng, Chang, Ting-ChangVolume:
46
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.46.4197
Date:
July, 2007
File:
PDF, 169 KB
english, 2007