Dielectric Breakdown and Charge Trapping of Ultrathin...

Japanese Journal of Applied Physics 2008 / 3 Vol. 47; Iss. 3

Dielectric Breakdown and Charge Trapping of Ultrathin ZrHfO/SiON High- k Gate Stacks

Wan, Rui, Yan, Jiong, Kuo, Yue, Lu, Jiang
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Volume:
47
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.47.1639
Date:
March, 2008
File:
PDF, 173 KB
english, 2008
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