Silicon Single-Electron Memory Having in-Plane Dot with Double Gates
Fujiaki, Tomo, Ohkura, Kensaku, Nakajima, AnriVolume:
47
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.47.4985
Date:
June, 2008
File:
PDF, 218 KB
english, 2008