Growth and Characterization of SiC Films by Hot-Wire Chemical Vapor Deposition at Low Substrate Temperature Using SiF 4 /CH 4 /H 2 Mixture
Kida, Takahiro, Nagasaka, Yohei, Sakurai, Takuya, Yamakami, Tomohiko, Hayashibe, Rinpei, Abe, Katsuya, Kamimura, KiichiVolume:
47
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.47.566
Date:
January, 2008
File:
PDF, 183 KB
english, 2008