InAs High Electron Mobility Transistors with Buried Gate...

Japanese Journal of Applied Physics 2008 / 9 Vol. 47; Iss. 9

InAs High Electron Mobility Transistors with Buried Gate for Ultralow-Power-Consumption Low-Noise Amplifier Application

Kuo, Chien-I, Hsu, Heng-Tung, Chang, Edward Yi, Miyamoto, Yasuyuki, Tsern, Wen-Chung
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Volume:
47
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.47.7119
Date:
September, 2008
File:
PDF, 281 KB
english, 2008
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