A Novel Step-Doping Fully-Depleted Silicon-on-Insulator...

Japanese Journal of Applied Physics 2009 / 11 Vol. 48; Iss. 11

A Novel Step-Doping Fully-Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor for Reliable Deep Sub-micron Devices

Elahipanah, Hossein, Orouji, Ali A.
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Volume:
48
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.48.114503
Date:
November, 2009
File:
PDF, 226 KB
english, 2009
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