Impact of Local High- k Insulator on Drivability and Standby Power of Gate-All-Around Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor
Omura, Yasuhisa, Hayashi, Osanori, Nakano, ShunsukeVolume:
49
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.49.044303
Date:
April, 2010
File:
PDF, 497 KB
english, 2010