Dual Gate Single-Electron Transistors with a Recessed...

Japanese Journal of Applied Physics 2010 / 11 Vol. 49; Iss. 11

Dual Gate Single-Electron Transistors with a Recessed Channel and Underlapped Source/Drain Structure

Lee, Joung-Eob, Kim, Garam, Yun, Jang-Gn, Kang, Kwon-Chil, Lee, Jung-Han, Kim, Dae-Hwan, Lee, Jong-Ho, Shin, Hyungcheol, Park, Byung-Gook
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Volume:
49
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.49.115201
Date:
November, 2010
File:
PDF, 1.41 MB
english, 2010
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