Room-Temperature Operation of a Single-Electron Transistor Made by Oxidation Process Using the Recessed Channel Structure
Lee, Joung-Eob, Kim, Garam, Wan, Kim Kyung, Shim, Won Bo, Lee, Jung-Han, Kang, Kwon-Chil, Yun, Jang-Gn, Lee, Jong-Ho, Shin, Hyungcheol, Park, Byung-GookVolume:
49
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.49.115202
Date:
November, 2010
File:
PDF, 1.66 MB
english, 2010