Superior Reliability of Gate-All-Around Polycrystalline...

Japanese Journal of Applied Physics 2011 / 1 Vol. 50

Superior Reliability of Gate-All-Around Polycrystalline Silicon Thin-Film Transistors with Vacuum Cavities Next to Gate Oxide Edges

Liu, Han-Wen, Chiou, Si-Ming, Huang, Hui-Ching, Gong, Jeng, Wang, Fang-Hsing
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
50
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.50.014202
Date:
January, 2011
File:
PDF, 807 KB
english, 2011
Conversion to is in progress
Conversion to is failed