Optoelectronic internal memory utilizing a...

Soviet Journal of Quantum Electronics 1980 / 07 Vol. 10; Iss. 7

Optoelectronic internal memory utilizing a metal–nitride–oxide–semiconductor structure and a laser electron-beam tube

Kozlovskiĭ, V I, Kuchaev, S V, Nasibov, A S, Pechenov, A N, Plotnikov, A F, Popov, Yurii A, Savvina, R M, Seleznev, V N
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Volume:
10
Language:
english
Journal:
Soviet Journal of Quantum Electronics
DOI:
10.1070/qe1980v010n07abeh010470
Date:
July, 1980
File:
PDF, 404 KB
english, 1980
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