Characterization of sub-micrometre silicon films (Si-LPCVD)...

Semiconductor Science and Technology 2002 / 09 Vol. 17; Iss. 9

Characterization of sub-micrometre silicon films (Si-LPCVD) heavily in situ boron-doped and submitted to treatments of dry oxidation

A t-Kaki, A, Boulakroune, M, Boukezzata, M, Berrabah, M, Djahli, F, Bellatreche, M S, Bielle-Daspet, D
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Volume:
17
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/17/9/315
Date:
September, 2002
File:
PDF, 263 KB
english, 2002
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